Simple CVD growth of P-doped graphitic hallow carbon spheres for high-voltage (2.0 V) aqueous symmetric supercapacitor
نویسندگان
چکیده
Abstract Doping of heteroatom into well-structured mesoporous carbon architecture can significantly augment the capacitive performance. In this work, we report P-doped graphitic hollow spheres (P-GHCS) grown over Fe-KIT-6 through in situ approach using catalytic CVD technique. The obtained P-GHCS possesses a relatively high surface area with uniform structure, good graphitization tunable P-doping contents. highly favorable structure and desirable doping were taken account to evaluate as modified electrode material towards high-performance supercapacitor. optimized P-GHCS-800 sample exhibits superior specific capacitance ( C sp ) 321 F g ?1 at 0.2 A outstanding cycling stability 2.9% loss its initial after 2000 cycles 6 M KOH electrolyte background three-electrode computerized system. More importantly, fabricated symmetric supercapacitor device withstand wide potential width 2.0 V, together remarkable cyclic (89.09%) current density 1 aqueous Na 2 SO 4 providing energy 10.83 Wh kg power 222.78 W . Additionally, demonstrated single cell which provided sufficient turn on red LED 20 mW emit light certain period time opens up possible realistic applications.
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ژورنال
عنوان ژورنال: Journal of Materials Science: Materials in Electronics
سال: 2021
ISSN: ['1573-482X', '0957-4522']
DOI: https://doi.org/10.1007/s10854-021-05466-9